摘要
介绍了垂直喷淋式MOCVD反应器的最新计算机模拟仿真结果,并根据仿真结果对反应器的结构和参数进行了优化设计,应用在自行研制的用于GaN和四元化合物材料生长的设备中。
The up-to-date results of MOCVD reactor numerical simulation are introduced, and the structure parameters of reactor are optimum designed according to the results and applied to the MOCVD systems, which are developed for GaN and/or quaternary compound materials by the 48th institute of CETC.
出处
《电子工业专用设备》
2008年第7期37-41,51,共6页
Equipment for Electronic Products Manufacturing
