摘要
利用光致发光谱研究了不同组分铟镓氮材料的光学特性.发现随着温度升高,2个样品的主峰表现出一种行为:半高宽度(FWHM)增加时,主峰位置红移;半高宽度减少时,主峰位置蓝移.对所得数据进行Arrhenius拟合,比较激活能得出结论:样品B中的非辐射复合中心比样品A中的易被激活;样品B中的载流子逃逸效应比样品A中更为明显.从而解释了2个样品发光效率不同的原因,为样品的改良提供了理论依据.
Optical properties of InGaN materials with different indium content are systematically studied by photoluminescence （PL）. There exist red-shift temperature dependence of the peak energy for InGaN-related PL with increasing full width at half maximum （FWHM） and a blue-shift with decreasing FWHM. The activa- tion energies are obtained from the Arrhenius plot, The results suggest that the nonradiative recombination centers of sample B are easier to activate than those of sample A, and the carrier-escaping effect in sample B is more prominent than that in sample A. Therefore, the reason why the sample with high indium content shows low luminescence efficiency is explained, which provides academic foundation for sample improvement.
出处
《烟台大学学报（自然科学与工程版）》
CAS
2008年第3期181-184,共4页
Journal of Yantai University(Natural Science and Engineering Edition)
基金
山东省优秀中青年科学家奖励基金资助项目(2006BS01240)
