摘要
研究了p-GaN层厚度对GaN基pin结构紫外探测器性能的影响.模拟计算表明:较厚的p-GaN层会减小器件的量子效率,然而同时也会减小器件的暗电流,较薄的p-GaN层会增加器件的量子效率,但是同时也增加了器件的暗电流.进一步的分析表明,金属和p-GaN之间的结电场是出现这种现象的根本原因.在实际的器件设计中,应该根据实际需要选择p型层的厚度.
We investigated the influence of thickness of p-GaN layer on the performance of p-i-n structure GaN ultraviolet photodetector. Through the simulation calculation, it was found that both the quantum efficiency and dark current of device decrease when employing thicker p-GaN layer, while both the quantum efficiency and dark current increase with decreasing thickness of p-GaN layer. It is suggested that the Schottky contact junction between the metal and p-GaN may be responsible for the incompatible effect. We has to make a suitable choice of the thickness of p-GaN in the device design according to the application requirement.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2008年第7期4570-4574,共5页
Acta Physica Sinica
基金
国家自然科学基金(批准号:60776047)
中国农业大学青年教师科研启动基金(基金批准号:2006007)资助的课题~~
关键词
GAN
紫外探测器
量子效率
暗电流
GaN, ultraviolet photodetector, quantum efficiency, dark current
