摘要
研究了ＣＭＯＳ电路在Ｘ射线辐射环境下性能的退化及剂量增强效应，测量了相对剂量增强系数。对不同工艺ＣＭＯＳ电路的剂量增强系数进行了比较，并对高原子序数材料的Ｘ射线剂量增强机理进行了讨论。
The performance degradation and dose enhancement effects of CMOS circuits in an X-ray radiation environment are presented The relative dose enhancement factors (RDEF) are measured and the RDEF of CMOS manufactured in different technological conditions are compared The mechanism of X-ray dose enhancement for the material with higher atomic number is discussed
出处
《核技术》
CAS
CSCD
北大核心
1997年第7期391-394,共4页
Nuclear Techniques
基金
国防科工委基金
