摘要
SiC纳米管是一种宽带隙准一维半导体纳米材料。元素Si属于sp3杂化,C易于形成石墨管状的sp2杂化,由Si、C构成的SiC纳米管的稳定性介于Si纳米管与C纳米管之间。介绍了SiC纳米管研究的最新进展,主要从SiC纳米管的实验和理论研究两个方面进行了综述,并展望了SiC纳米管今后的研究方向。
SiC nanotubes are one - dimension nanomaterials with wide band gaps. Sillicon nanotubes is diffcult owning to sp3 hybrization ,whereas sp2 hybridization is easy to form more stable graphite tubular structures. The stability of SiC nanotubes intervence between Si and C nanotubes. The recent researches on SiC nanotubes were reviewed in this article. At the same time, theoretical and experimental research developments were also introduced. At last, the promising prospect of SiC nanotubes were discussed.
出处
《化工时刊》
CAS
2008年第6期45-50,共6页
Chemical Industry Times
基金
江苏省博士后科研资助计划(苏人通[2005]355号)
关键词
SiC纳米管
结构
性能
制备
SiC nanotubes structure properties synthesis
