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A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers

一种用于便携式射频识别阅读器的CMOS功率放大器(英文)
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摘要 Aiming at the specific protocol of RFID technology,a 915MHz CMOS transmitter front-end for OOK modulation is implemented in a 0.18μm CMOS process. The transmitter incorporates a class-E power amplifier (PA), a modulator, and a control logic unit. The direct-conversion architecture minimizes the required on-and-off-chip components and provides a low-cost and efficient solution. A novel structure is proposed to provide the modulation depth of 100% and 18% ,respectively. The PA presents an output ldB power of 17.6dBm while maintaining a maximum PAE of 35.4%. 针对一种特定的射频识别技术的通讯协议(ISO1800-6B) ,提出了一种应用于射频识别读写器中的发射机前端结构,以实现发射信号的OOK调制.采用0.18μm CMOS工艺实现的这种高效率、高度集成的无线发射机前端由射频信号调制器、E类功率放大器以及相应的逻辑控制单元组成,其中的功率放大器的小信号增益约为23dB,其1dB压缩点输出功率为17.6dBm,最大输出功率为19.0dBm,而最大功率增加效率为35.4%.整个发射机的输出信号满足相应协议的特定要求,可以实现不同调制深度(18%和100%)的射频信号输出.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第6期1044-1047,共4页 半导体学报(英文版)
关键词 CMOS power amplifier RFID TRANSMITTER modulation depth CMOS 功率放大器 射频识别 发射机 调制深度
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参考文献11

  • 1ISO/IEC JTC 1/SC 31/WG 4 N0722.. Information technology automatic identification and data capture techniques Radio frequency identification for item management air interface-Part 6: Parameters for air interface communications at 860-960MHz, Nov, 2003. 被引量:1
  • 2EPC Radio-Frequency Identity Protocols.. class-1 Generation-2 UHF RFID, Portocol for Communications at 860MHz--960MHz, Version 1.0.9, Jan. 31 th, 2005. 被引量:1
  • 3Kipnis I, Chiu S, Loyer M, et al. A 900MHz UHF RFID reader transceiver IC. IEEE J Solid-State Circuits, 2007,42 (12):2822. 被引量:1
  • 4Kwon I, Bang H, Choi K, et al. A single chip CMOS transceiver for uhf mobile RFID reader. ISSCC Digest of Technical Papers, 2007:216. 被引量:1
  • 5Safarian A, Shameli A, Rofougaran A, et al. An integrated RFID reader. ISSCC Digest of Technical Papers,2007:218. 被引量:1
  • 6Khannur P B,Chen X, Yan D L, et al. An 860 to 960MHz RFID reader IC in CMOS. IEEE Radio Frequency Integrated Circuits Symposium, 2007:269. 被引量:1
  • 7Aoki I, Kee S D, Hajimiri A. Fully integrated CMOS power amplifier design using the distributed active-transformer architecture. IEEE J Solid-State Circuits,2002,37(3) :371. 被引量:1
  • 8Mazzani A, Larcher L,Brama R,et al. A 1.4GHz--2GHz wide- band CMOS class-E power amplifier delivering 23dBm peak with 67% PAE. IEEE Radio Frequency Integrated Circuits Symposium,2006:425. 被引量:1
  • 9Sokal N, Sokal A. Class-E--a new class of high-efficiency, tuned single-ended switching power amplifiers. IEEE J Solid-State Circuits, 1975,10:168. 被引量:1
  • 10Khannur P B. A CMOS power amplifier with power control and T/R switch for 2. 45-GHz bluetooth/ISM band applications. IEEE Radio Frequency Integrated Circuits Symposium,2003.-145. 被引量:1

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