摘要
在碳化硅陶瓷反应连接工艺的基础上研究了一种新型的反应连接工艺，利用该工艺连接了自制的反应烧结碳化硅（RB-SiC）陶瓷。对连接的RB-SiC陶瓷样品表面初步抛光后，测试了焊缝宽度、焊缝处的显微组织结构、连接层的力学性能和高低温实验后连接层对表面面形的影响。测试结果表明：利用新型反应连接工艺连接的RB-SiC陶瓷的焊缝宽度分布在54～77μm之间；焊缝处的显微组织结构非常均匀，接近基体材料；测试了10个样品的室温抗弯强度，平均值为307MPa，而且断裂都产生在母材上，说明焊缝处力学性能优异；高低温实验后，整块碳化硅陶瓷表面面形无变化，说明连接层的热学性能与母材一致，无残余应力。
A reaction bonded silicon carbide （RB-SiC） was joined with a new-type reaction-formed joint technology based on traditional reaction-formed joint process. The thickness, microstructure, and the mechanical and thermal properties of welding line were tested. The test results show that the welding line＇s thickness of RB-SiC in novel-formed joint technology is thin to 54-77 μm, and its microstructure is similar to the RB-SiC ceramic, so that mechanical property is excellent, the average bending strength of 10 joints is 307 MPa. The welding line doesn＇ influence on the surface figure before and after the temperature of the joining blank changes from -10 ℃ to 65 ℃ ,which shows the thermal property of welding line is suitable for that of RB-SiC ceramic.
出处
《光学精密工程》
EI
CAS
CSCD
北大核心
2008年第6期1037-1041,共5页
Optics and Precision Engineering
基金
中科院三期创新项目资助
关键词
反应烧结
碳化硅陶瓷
反应连接工艺
reaction bonded
silicon carbide ceramics
reaction-formed joint technology
