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微悬臂梁传感器以及读出电路的单片集成 被引量:4

Monolithic Integration of Micro-Cantilever and Readout Circuits
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摘要 提出了一种基于SOI技术的微悬臂梁传感器集成化方案,并从传感器信号调理电路的设计和集成化工艺设计方面论证了该方案的可行性。微悬臂梁传感器集成化系统主要包括惠斯通电桥阵列以及微悬臂梁传感器的信号调理电路。信号调理电路部分包括温补电流源、时分多路选择器和两级仪用放大器。测量的结果证实了我们单片集成的可行性。 This paper presents a novel way of monolithically integrated micro-cantilever with read-out circuits by using both SOI CMOS and the SOI micromachining technologies. Based on a thorough investigation and an analysis of the worldwide research achievements on micro-cantilevers monolithic integration, an integrated sensor system composed of a cantilever array, a digital controlled multiplexer, and an instrumentation amplifier are designed and processed, and intermediate-CMOS process was designed to fabricate the integrated system. The measurement results on the SOI CMOS circuitry of the integrated system prove the feasibility of the integration design.
出处 《传感技术学报》 CAS CSCD 北大核心 2008年第4期667-671,共5页 Chinese Journal of Sensors and Actuators
基金 863资助项目(2006AA04Z336)
关键词 单片集成 MEMS SOI 仪用放大器 monolithic integration MEMS SOI instrument amplifier
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参考文献8

  • 1Kanda,Y.IEEE Trans.Electron Devices[J].1982,ED-29,64. 被引量:1
  • 2J.Bryzek,K.Petersen,and W.Mc Culley,Micromachines on the March[C]//NY,USA,IEEE Spectrum,No.5,May 1994,31:20-31. 被引量:1
  • 3Xiaomei Yu,Haitao Zhang,Xiuhan Li,Ting Li,and Dacheng Zhang,Design and Characterization of High-Sensitivity Cantilevers[C]//The 4th IEEE Conference on Sensors (IEEE Sensor 2005),Oct.31st-Nov.3rd,Orange County,Irvine,California,USA. 被引量:1
  • 4King Tsu-Jae,Howe R T,Sedlky S,Gang Liu,B.C.-Y,Wasilik M,Duenn C.Recent Progress in Modularly Integrated MEMS Technologies[C]//Electron Devices Meeting,San Francisco,CA,USA.8-11 Dec.2002. 被引量:1
  • 5A.J.Peyton and V.Walsh,"Analog Electronics with OP Amps",Cambridge University Press,1993. 被引量:1
  • 6Kenneth R.Laker,Willy M.C.Sansen,Design of Analog Integrated Circuits and System[M].McGraw-Hill,Inc,1994. 被引量:1
  • 7Maria Villarroya,Jaume Verd,Jordi Teva,et al,Sensor Based on Arrays of Sub-Micrometer Scale Resonant Silicon Cantilevers Integrated Monolithically with CMOS Circuitry[C]//Electron Devices,2005 Spanish Conference on 2-4 Feb.2005:603-606. 被引量:1
  • 8J.-P.Colinge,SOI Devices and Circuits[C]//Serbia,Proc.22nd Int.Conf.on Microelectronics,2000,2:407-414. 被引量:1

同被引文献16

  • 1陈宁,宋传明,陈文芗.霍尔式力传感器的研制[J].厦门大学学报(自然科学版),2005,44(1):47-49. 被引量:6
  • 2江建明,娄利飞,汪家友,杨银堂.单片集成MEMS技术[J].传感器技术,2005,24(3):1-3. 被引量:5
  • 3王建华,敬大德,曹少飞.基于双悬臂梁结构的应变测量传感器研究[J].传感技术学报,2005,18(3):589-592. 被引量:16
  • 4Allegro MicroSystems, Inc. A1301and1302:Continuous-Time Ratiometrie Linear Hall Effect Sensors EEB/OL]. 2008. http://www. allegromiero. com/cn/Produets/Part_ Numbers/ 1301/1301. pdf 被引量:1
  • 5CHIOU J A, STEVEN C. Thermal hysteresis and voltage shift analysis for differential pressure sensors [J]. Sensors and Actuators, 2007, 135: 107-112. 被引量:1
  • 6WANG Q, DING J, WANG W. Fabrication and tem-perature coefficient compensation technology of low cost high temperature pressure sensor[J]. Sensors and Actuators, 2005, 120: 468-473. 被引量:1
  • 7GUCKEL H. Surface micromachined physical sensors[J]. Sensors and Materials, 1993, 23: 251-264. 被引量:1
  • 8SMITH C. Piezoresistance effect in germanium and silicon [J]. Phys Rev, 1954, 94: 42-49. 被引量:1
  • 9PEYTON A J, WALSH V. Analog electronics with op amps [M]. Cambridge: Cambridge University Press, 19931 123-146. 被引量:1
  • 10GRIFFITH R, VYNE R L, DOTSON R N. A 1-V BiCMOS rail-to-rail amplifier with n-channel depletion mode input stage [J]. IEEE J Sol Sta Circ, 1997, 32 (12): 234-238. 被引量:1

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