摘要
本文用电化学腐蚀方法制备了多孔硅,并在多孔硅、石英、单晶硅片上用PECVD沉积了本征和P型硅膜,然后将硅膜分别用不同的温度和时间做固相晶化,借助Raman、SEM和XRD等手段对退火前后的硅薄膜微结构进行了分析研究。结果表明:单晶硅和多孔硅衬底上的非晶硅薄膜比石英衬底上的更容易晶化;具有硅晶格的衬底可以明显地起到种晶的作用,在一定条件下可以生长出晶格取向一致的硅膜。
Intrinsic and p-type silicon films were grown on substrates, such as silicon wafer, porous silicon, and quartz, and annealed at different temperatures for varied periods of time. The microstmctures were characterized with X-ray diffraction（XRD）, scanning electron microscopy（SEM）, and Ramen spectroscopy. The results show that surface morphology of the substrate considerably affects the crystallization of the Si films. For instance, silicon substrate leads to epitaxial Si film growth under favorable conditions; and Si films grown on porous silicon crystallizes more easily than that on quartz substrate.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2008年第3期230-234,共5页
Chinese Journal of Vacuum Science and Technology
关键词
非晶硅
退火
PECVD
多孔硅
Amorphous silicon, Anneal, PECVD, Porous silicon
