摘要
本文介绍用离子束增强沉积（ＩＢＥＤ）法在硅片上制备氮化硼（ＢＮ）薄膜及镀膜参数对膜中立方氮化硼（ｃ－ＢＮ）含量的影响的试验研究，主要研究轰击离子束密、镀膜速率、轰击束中氩气的含量及衬底温度的影响。用红外（ＩＲ）谱对膜进行了分析，结果指出：（１）在给定的轰击束能量与束密下氮化硼薄膜中立方相的含量是随镀膜速率而变化的，且存在一个最佳镀膜速率值；（２）提高离子轰击束密，则此最佳镀膜速率值也相应增大；（３）镀膜速率又是随轰击束密及轰击束中氩气含量的增大而减小的；（４）衬底温度在４００℃以下时，膜中ｃ－ＢＮ相的含量随温度提高而增加。
This paper introduces the formation of boron nitride(BN) thin films on Si substrates by ion beam enhanced deposition(IBED) and the experimental study of the effect of deposition parameters on the cubic boron nitride(c BN) content in the BN films. The effect of the bombardment ion beam density, the deposition rate, the percentage of argon in the bombardment gas and the substrate temperature was investigated. The thin films were analyzed by infrared spectroscopy(IR). The results showed that:(1) The content of c BN in the BN films bombarded by the ion beam with a given energy and density varied with deposition rate and there was an optimum value of deposition rate. (2) When the ion beam density increased, the value of optimum deposition rate also increased. (3) The deposition rate decreased with increasing the bombardment ion beam density and the percentage of argon in the bombardment gas. (4) When the substrate temperature was below 400℃, the c BN percentage in the films increased with enhancing the substrate temperature.
出处
《真空》
CAS
北大核心
1997年第6期5-9,共5页
Vacuum
基金
国家自然科学基金
