摘要
作者设计了一种新颖的单栅和双栅跑道状场发射结构．该结构可提供好的阵列均匀性和大的场发射电流密度．双栅机构可提供小的开启电压．实验结果表明单栅结构的开启电压近似为１００Ｖ，而场发射电流密度近似为２．４Ａ／ｃｍ２，这是火山口状场发射结构的１２倍．数值模拟显示双栅结构的开启电压较之单栅结构减小了３０％．
In this paper, new single and doublegate racetrackshaped field emitter structures are reported. The race-trackshaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to provide small turnon voltage. Experimental results show that the turnon voltage of the singlegate structure is approximately 100 V, and the field emission current density is approximately 2.4A/cm2 which is over 12 times larger than that of the volcanoshaped emitter structure reported previously. Furthermore, numerical simulations show that, compared with the singlegate structure,the turnon voltage of the doublegate structure is reduced by 30 %,compared with the singlegate structure.
关键词
跑道状
场发射结构
微电子学
真空微电子器件
Race-track-shaped rield emitter structure, high field emission current density, low turnon voltage
