摘要
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition （VHF-PECVD） at different silane concentrations in a P chamber. Through analysis of the structural and electrical properties of these materials,we conclude that the photosensitivity slightly decreased then increased as the silane concentration increased,while the crystalline volume fraction indicates the opposite change. Results of XRD indicate that thin films have a （220） preferable orientation under certain conditions. Microcrystalline silicon solar cells with conversion efficiency 4. 7% and micromorph tandem solar cells 8.5% were fabricated by VHF-PECVD （p layer and i layer of microcrystalline silicon solar cells were deposited in P chamber）, respectively.
在掺杂P室采用甚高频等离子体增强化学气相沉积( VHF-PECVD)技术,制备了不同硅烷浓度条件下的本征微晶硅薄膜.对薄膜电学特性和结构特性的测试结果分析表明:随硅烷浓度的增加,材料的光敏性先略微降低后提高,而晶化率的变化趋势与之相反; X射线衍射( XRD)测试表明材料具有(220)择优晶向.在P腔室中用VHF-PECVD方法制备单结微晶硅太阳能电池的i层和p层,其光电转换效率为4.7 %,非晶硅/微晶硅叠层电池(底电池的p层和i层在P室沉积)的效率达8.5 %.
基金
国家高技术研究发展规划(批准号:2007AA05Z436)
国家重点基础研究发展规划(批准号:2006CB202602 ,2006CB202603)
国家自然科学基金(批准号:60506003)
南开大学博士启动基金(批准号:J02031)
科技部国际合作重点项目(批准号:2006DFA62390)
教育部新世纪人才计划资助项目~~
