摘要
以六甲基二硅胺烷(HMDS)作为硅源和碳源,H_2为载气,Ar为稀释气体,前驱体由载气通过鼓泡法带入反应室,通过等温化学气相渗透法(Isothermal Chemical Vapor Infiltration,ICVI)在SiC纤维表面沉积SiC涂层。通过控制沉积温度来控制涂层的表面形貌、厚度。研究表明,在1100℃沉积的涂层中开始有β-SiC晶相析出,适当降低沉积温度至950℃可以防止残余碳在反应室的富集,在950℃时SiC的沉积厚度与沉积时间呈近线性关系。
SiC coatings were deposited by Isothermal Vapor Infiltration （ICVI） using HMDS as the silicon and carbon source on the surface of SiC fiber. H2 and Ar were chosen as carrying gas and dilute gas, respectively. The morphology and thickness of the deposited coating was controlled by deposition temperature.β-SiC was formed in the coating at 1100 ℃ and free carbon was suppressed by lowering temperature to 950 ℃. The thickness of SiC coating was linear to the deposition time at 950 ℃.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2008年第A01期797-799,共3页
Rare Metal Materials and Engineering
基金
国家973计划资助项目
