摘要
双面抛光已成为硅晶片的主要后续加工方法,但由于需要严格的加工条件,很难获得理想的超光滑表面。本文设计了新的硅片双面抛光加工工艺路线,并在新研制的双面抛光机上对硅晶片进行抛光加工,通过试验,研究了不同加工参数对硅晶片表面粗糙度和材料去除率的影响。采用扫描探针显微镜和激光数字波面干涉仪分别对加工后的硅晶片进行测量,试验结果表明:在优化试验条件下硅晶片可以获得表面粗糙度0.533nm的超光滑表面。
Double sided polishing process has become a main machining method for silicon wafer finishing process, but it is difficult to get ultra-smooth surface with the very stringent machining conditions. In this paper, the new way of double sided polishing processing technic of silicon wafer was designed, and polished process on the new double sided polishing machine. Removal Rate and Roughness Under Different processed parameter were studied.The roughness was measured by AFM nanoscope and the flatness was measured by a Digital Laser Wave FrontInterferometer,Experiments indicated: the ultra-smooth surface of silicon wafer with Ra 0.533nm has been obtained based on the optimized condition.
出处
《新技术新工艺》
2008年第4期41-43,共3页
New Technology & New Process
关键词
双面抛光
硅晶片
超光滑表面
加工工艺
double sided polishing,silicon wafer,ultra-smooth surface,processing technic
