摘要
文章主要介绍了热载流子效应机理及产生原因,从其机理出发着重介绍了抗热载流子效应的设计方法。影响CMOS电路热载流子效应的因素有:晶体管的几何尺寸、开关频率、负载电容、输入速率以及晶体管在电路中的位置。通过对这些因素的研究,文章提出了CMOS电路热载流子可靠性设计的通用准则。
This article introduces the mechanism and causation of hot-carrier effect, emphasizes the way of design about resisting the hot-carrier effect. The factors of influencing the CMOS circuit are： dimension of transistor, frequency of switch, load capacitance, input speed and position in the circuit, This article also advances the way of design about the reliability of CMOS circuit in hot-carrier effect by researching the factors.
出处
《电子与封装》
2008年第4期25-28,共4页
Electronics & Packaging
