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入射光参量对Ce:KNSBN晶体中光扇效应的影响

Influence of Incident Parameter on Beam Fanning Effect in Ce∶KNSBN Crystal
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摘要 采用非同时读出条件下晶体两波耦合实验装置,研究了入射光强度及光入射角对Ce∶KNSBN晶体中光扇效应的影响.结果表明,光扇效应存在明显的入射光强度阈值特性,入射光强度阈值为38.2mW/cm2.对应相同的入射光强度,光入射角θ为15°时稳态光扇强度Ifsat最强,如:入射光强度为38.2mW/cm2时,Ifsat最大为0.7mW/cm2;入射光强度为57.3mW/cm2时,Ifsat最大为1.8mW/cm2. A non-synchronously-numerating experimental system was applied in this research. The influence of the incident beam intensity and the beam incident angle on the beam fanning effect was investigated. The results show that the threshold effect of the incident beam intensity for the beam fanning in Ce : KNSBN crystal is observed, and the threshold intensity of incident beam is 38.2 mW/cm^2. And the steady beam fanning intensity Ifast reaches a peak at 0=15° under the same incident beam intensity, for example, the peak value of Ifsat is 0.7 mW/cm^2 under the condition that the incident beam intensity is 38.2mW/cm^2 , and 1.8 mW/cm^2 at 57.3 mW/cm^2.
出处 《光子学报》 EI CAS CSCD 北大核心 2008年第4期682-685,共4页 Acta Photonica Sinica
基金 河北省自然科学基金(F20060010023)资助
关键词 CE:KNSBN晶体 光扇效应 入射光参量 阈值特性 Ce : KNSBN crystal Beam fanning effect Incident parameter Threshold property
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