摘要
采用直流反应磁控溅射方法制备Ta2O5薄膜,并研究了其制备工艺;在Arnoldussen法的基础上,采用了一种新的方法对Ta2O5薄膜离子导电性能进行了测试。结果表明,制备的Ta2O5薄膜具有良好的离子导电性能。
In this paper, the prepatation technology of the Ta205 films by DC reactive magnetron sputtering was studied.The ionic conductivity was measured by a new method based Amoldussen method,the result showed the Ta205 films have a good ionic conductive performance.
出处
《真空与低温》
2008年第1期6-10,共5页
Vacuum and Cryogenics
基金
表面工程技术国家级重点实验室基金项目(9140C543010704)资助
