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Preparation of high-purity tantalum ethoxide by vacuum distillation 被引量:3

Preparation of high-purity tantalum ethoxide by vacuum distillation
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摘要 Effects of reflux ratio,water addition and content of water in ethanol on the purity and yield of tantalum ethoxide during vacuum distillation were investigated under the operational conditions of pressure of 1 kPa,oil bath temperature of 210-230 ℃,and outlet temperature of 190 ℃.The condensate sample was characterized by FTIR,1H-NMR spectroscopy and Raman spectra,respectively.The contents of tantalum,carbon and hydrogen in the sample were also determined with elemental analysis instrument.The obtained results consistently demonstrate that the condensate is tantalum ethoxide.The content of impurity,such as Al,As,Ca,Co,Cr,Cu,Fe,K,Mg,Mn,Mo,Na,Ni,Pb,Sn,Ti,V and Zn,in tantalum ethoxide is less than 0.000 05%,while Nb content is less than 0.000 5%.The content of impurities in tantalum ethoxide sample excels that of Epichem Group's requirement for Ta(OC2H5)5 of 99.999%. Effects of reflux ratio, water addition and content of water in ethanol on the purity and yield of tantalum ethoxide during vacuum distillation were investigated under the operational conditions of pressure of 1kPa, oil bath temperature of 210-230 ℃, and outlet temperature of 190℃. The condensate sample was characterized by FTIR, 1↑H-NMR spectroscopy and Raman spectra, respectively. The contents of tantalum, carbon and hydrogen in the sample were also determined with elemental analysis instrument. The obtained results consistently demonstrate that the condensate is tantalum ethoxide. The content of impurity, such as Al, As, Ca, Co, Cr, Cu, Fe, K, Mg, Mn, Mo, Na, Ni, Pb, Sn, Ti, V and Zn, in tantalum ethoxide is less than 0.000 05%, while Nb content is less than 0.000 5%. The content of impurities in tantalum ethoxide sample excels that of Epichem Group's requirement for Ta(OC2H5)5 of 99.999%.
出处 《中国有色金属学会会刊:英文版》 EI CSCD 2008年第1期196-201,共6页 Transactions of Nonferrous Metals Society of China
基金 Project(50404011)supported by the National Natural Science Foundation of China Project(20040350187)supported by the Postdoctoral Science Foundation of China Project(2007AA03Z425)supported by the Hi-Tech Research and Development Program of China
关键词 高纯度乙醇钽 真空蒸馏 杂质 化学制剂 tantalum ethoxide distillation FTIR
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  • 1OZER N, LAMPERT C M. Structural and optical properties of sol-gel deposited proton conducting Ta2O5 films [J]. Journal of Sol-Gel Technology, 1997, 8(1/3): 703-709. 被引量:1
  • 2MIKKO R, KAUPO K, ANTTI R, RAISANEN P I, LESKELA M, SAJAVAARA T, KEINONEN J. Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources [J]. Science, 2000, 288(5464): 319-321. 被引量:1
  • 3DONGJOON M, SUNGHO P, BUM-SEOK S, CHOI S, LEE N, LEE J H. Low temperature crystallization of high permittivity Ta oxide using an Nb oxide thin film for metal/insulator/metal capacitors in dynamic random access memory applications [J]. Journal of Vacuum Science and Technology B, 2005, 23(1): 80-83. 被引量:1
  • 4KERN W, CHEN A, SANDLER N. MOCVD of tantalum pentoxide for large-area ULSI circuit wafers [J]. Journal de Physique IV, 1991, C2(Suppl): 311-317. 被引量:1
  • 5CAVA R F, PECK W F, KRAJEWSKI J J. Enhancement of the dielectric constant of Ta2O5 through substitution with TiO2 [J]. Nature, 1995, 377(6546): 215-217. 被引量:1
  • 6WANG Wen, JIA De-chang, ZHOU Yu, YE Feng. Synthesis and characterization of nanosized SrBi2Ta2O9 powder by a novel sol-gel process [J]. Materials Research Bulletin, 2002, 37(15): 2517-2524. 被引量:1
  • 7CHENG Z X, KIMURA H, OZAWA K, MIYAZAKI A, KANNA C V. Ferroelectric lithium tantalate thin film derived from peroxide [J]. Journal of Alloys and Compounds, 2005, 402(1/2): 208-212. 被引量:1
  • 8杨声海,王亦男,何静,唐谟堂,邱冠周.高纯纳米氧化钽的制备[J].稀有金属材料与工程,2007,36(2):282-286. 被引量:8
  • 9MEHROTRA R C. Synthesis and reactions of metal alkoxides [J]. Journal of Non-crystalline Solids, 1988(100): 1-15. 被引量:1
  • 10FRIEDRICH Z. Process for preparing tantalum alkoxides and niobium alkoxides [P]. US 6548685, 2003-4-15. 被引量:1

二级参考文献17

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同被引文献30

  • 1杨声海,潘泽强,李朝晖,唐谟堂,邱冠周.“牺牲”阳极法合成乙醇钽研究[J].稀有金属材料与工程,2006,35(4):625-628. 被引量:8
  • 2MASSE J P,SZYMANOWSKI H,ZABEIDA O,AMASSIAN A,KLEMBERG-SAPIEHA J E,MARTINU L.Stability and effect of annealing on the optical properties of plasma-deposited Ta205 and Nb205 films[J].Thin Solid Films,2006,515(4):1674-1682. 被引量:1
  • 3TANAKA A,MIYASHITA K,TASHIROT,KIMURAM,SUKEGAWA T.Preparation of lithium niobate films by metalorganic chemical vapor deposition with a lithium alkoxide source[J].Journal of Crystal Growth,1995,148(3):324-326. 被引量:1
  • 4MARUYAMA T,KANAGAWA T.Electrochromic properties of niobium oxide thin films prepared by chemical vapor deposition[J].Journal of the Electrochemical Society,1994,141(10):2868-2871. 被引量:1
  • 5WERNBERG A A,GYSLING H J.Chemical vapor deposition of niobium and tantalum oxide films:US,5271957[P].1993-12-21. 被引量:1
  • 6BRADLEY D C.Metal alkoxides as precursors for electronic and ceramic materials[J].Chemical Reviews,2002,89(6):1317-1322. 被引量:1
  • 7WOOD B D,MOCANU V,GATES B D.Solution-phase synthesis of crystalline lithium niobate nanostrnctures[J].Advanced Materials,2008,20(23):4552-4556. 被引量:1
  • 8MACEK M,OREL B.Electrochromism of sol-gel derived niobium oxide films[J].Solar Energy Materials and Solar Cells,1998,54(1):121-130. 被引量:1
  • 9PIGNOLET A,RAO G M,KRUPANIDHI S B.Rapid thermal processed thin films of niobium pentoxide (Nb2Os) deposited by reactive magnetron sputtering[J].Thin Solid Films,1995,261(1/2):18-24. 被引量:1
  • 10AKIYAMA Y,SHITANAKA K,MURAKAMI H,SHIN Y S,YOSHIDA M,IMAISHI N.Epitaxial growth of lithium niobate film using metalorganic chemical vapor deposition[J].Thin Solid Films,2007,515(12):4975-4979. 被引量:1

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