摘要
氯化铯纳米岛光刻技术是一种分子自组装光刻技术,该技术利用氯化铯在一定湿度下的自组装特性来形成具有一定尺寸和分布的原始氯化铯纳米岛结构,通过调整工艺条件可以适度控制氯化铯岛结构的尺寸和覆盖率。氯化铯岛结构的尺寸和覆盖率主要取决于氯化铯薄膜厚度、显影时间和相对湿度,其中膜厚的影响最大。通常在其他条件不变的情况下,薄膜越厚覆盖率越高,而显影时间越长覆盖率则可能越低。在厚度、相对湿度一定的情况下,显影时间较短时,岛结构以小直径为主,随着时间增加,该结构直径分布变得均匀,并且以大直径为主,两者都大致符合高斯分布。
The technology of CsCl nanoisland lithography, as a kind of self - assembled technology, uses CsCl as the self - assembled material by its growth in a certain relative humidity with the hemisphere islands of certain mean diameter（ 〈d 〉 ） and fractional surface coverage（F） . The mean diameter and fractional surface coverage of the CsCl nanoislands can be partly controlled with different sizes by changing the paremeters of processing conditions. Mean diameter and F are mainly dominated by CsCl film thickness （L）, relative humidity （RH） and CsCl ripening time （t） in which the most important factor is film thickness. Generally, the thicker the CsCl film is, the higher the fractional surface coverage is when other factors remain unchanged, and the F will decrease with the CsCl ripening time. The CsCl nanoislands with the diameter distribution of about Gaussians will grow up with the ripening time, and the small CsCl nanoislands can be done by short developing time in low relative humidity and thin thickness of the CsCl film.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2008年第1期189-192,共4页
Journal of Functional Materials and Devices
基金
国家自然科学基金(50375150)资助
