摘要
在氧化铟锡玻璃上电化学合成了CdSe薄膜,采用垂直沉积法首次在CdSe薄膜上制备了SiO2胶体晶体,实现了CdSe表面介电常数的调节。扫描电镜观察表明,500nm微球在CdSe薄膜上呈面心立方密堆结构排列,在微米尺度上胶体晶体显示出一定的多晶序。与SiO2胶体晶体相比,CdSe-SiO2光子晶体的UV-vis-NIR透射谱只有一个较宽的光子带隙,带隙在近红外波段随入射角减小向短波方向移动。所得CdSe-SiO2光子晶体样品可作为地面目标针对红外卫星成像的伪装材料。
CdSe films were electrodeposited on indium tin-oxide coated glass （ITO-glass）. Subsequently three dimensional （3D） SiO2 colloidal crystals were prepared on the films through vertical deposition technique. As a result, the dielectric constant on the surface of the CdSe film could be tuned. SEM showed that colloidal microspheres of 500nm were closely packed into fcc arrangement on the film surface. The colloidal crystal was a mixture of small-size domains with the ordered scale at tens of micrometers. A wide photonic band gap was observed in the UV-vis-NIR spectrum of CdSe-SiO2 photonic crystal, which was different from that of SiO2 colloidal crystal prepared on ITO-glass. The stop band at near infrared shifted to short wavelength with the incidence angel decreasing. CdSe-SiO2 photonic crystals prepared could be used as camouflage materials.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2008年第1期20-22,25,共4页
Journal of Functional Materials
基金
国家自然科学基金资助项目(50671082)
航空科学基金资助项目(05G530038)
关键词
胶体晶体
光子带隙
垂直沉积
CDSE
colloidal crystal
photonic band gap
vertical deposition
CdSe
