摘要
利用微波等离子体化学气相沉积法在覆盖金属钛层的陶瓷衬底上,利用改变衬底温度方法沉积不同结构的碳膜。通过扫描电子显微镜、拉曼光谱对碳膜进行了分析测试,并研究了不同衬底温度下沉积的碳膜的场致电子发射特性。对于在衬底温度800℃时制备的碳膜,在电场3.3 V/μm时,最大场发射电流密度达1 mA/cm2。
The carbon films were fabricated in different growth temperature by microwave plasma chemical vapor deposition （MPCVD） method, the ceramic with a Ti mental layer was used as substrate. The carbon films were evaluated by Raman scattering spectroscopy and scanning electron microscopy （SEM）. The field emission properties were tested by using a diode structure in a vacuum chamber for observing and characterizing the field emission. It was found that the carbon film grown at temperatures of 800℃ exhibited good electron emission properties. An emission current density as high as 1 mA/cm^2 was obtained under the condition of 3.3 V/μm applied field.
出处
《真空电子技术》
2007年第6期59-61,共3页
Vacuum Electronics
关键词
微波等离子体化学气相沉积
场致电子发射
金刚石聚晶
Microwave plasma chemical vapor deposition
Field emission
Diamond microcrystallineaggregate
