摘要
用光激瞬态电流谱(OTCS)方法测量半绝缘InP:Fe的深能级,研究了光强对OTCS测试的影响。在低温下,用强光测得InP:Fe中存在ET=0.34eV的电子陷阱和ET=1.13eV的空穴陷阱。光强增大,ET=0.34eV的电子陷阱的OTCS峰的位置向高温方向移动,不同的光强下测得的ET也不同。文章从光的强度影响深能级的填充率对ET进行了理论修正,实验上发现修正后误差大大减小了。
In this paper,injection photodetectors have been studied both theoretically and experimentally.The results turned out contrary to the anticipated aim of the injection theory and device design.Analysis on the results is made which shows that a photoreceiving open circuit p n junction is not able to improve sensitivity and detectivity of photosensitive devices,as it is difficult to realise extraction mechanism of injection currents of the open circuit p n junction.
出处
《半导体光电》
CAS
CSCD
北大核心
1997年第4期273-277,共5页
Semiconductor Optoelectronics
关键词
半导体材料
特性测量
光激瞬态电流谱
杂质能级
Injection Photodetectors,Indirect Coupling Photodetectors,Low light detector,Indirect Coupling,Injection Current,Sensitivity,Detectivity,Coupling Coefficient