摘要
文章设计了一种工作在亚阈值状态下的CMOS电压基准源,分析了MOSFET工作在亚阈区的电压和电流限定条件。电压基准源可提供与工艺基本无关近似零温度系数的基准电压。为了提高电路的电源抑制比,该电路采用了共源共栅电流镜结构。该结构采用了一种新型的偏置电路,使得电流镜各级联管均工作在饱和区边缘而不脱离饱和区,提高输出电压摆幅,得到有较高恒流特性的基准电流。该电路采用0.6μm CMOS工艺,通过Spectra仿真,可工作在2V电压下,输出基准电压1.4V,温度系数为17×10-6(V/℃)。
A CMOS voltage reference circuit operate under sub-threshold state has been presented in this paper and analysising the limitation of MOSFET when it works in sub-threshold condition. The voltage with non temperature coefficient and process unrelated provided by voltage reference, For enhancing the PSRR, this circuit adapts cascade current mirror structure is biased by a new type circuit which the cascade MOSFET worked at saturation margin to improve the output swing and the more constant bias current can be got. This circuit using 0.6μm CMOS process, which is simulated by Spectra, it can work under 2V voltage, the output reference voltage is 1.4V, and the temperature factor is 17×10^6 （ V/℃ ）.
出处
《电子与封装》
2008年第1期25-28,共4页
Electronics & Packaging
关键词
电压基准源
亚阈区
共源共栅偏置
voltage reference
sub-threshold
cascade current source
