摘要
在不同的基底温度下,采用直流磁控反应溅射法在硅基底上制备了氮化钛(TiNx)薄膜,研究了基底温度对薄膜结晶取向、表面形貌和导电性能的影响。实验结果表明:基底温度较低时,薄膜主要成分为四方相的Ti2N,具有(110)择优取向,当基底温度升高到360℃时薄膜中开始出现立方相的TiN。TiNx薄膜致密均匀,粗糙度小。随着基底温度的升高薄膜的电阻率显著减小。
Titanium nitride thin films were prepared on Si substrates by dc reactive magnetron sputtering. The influence of substrate temperature on the crystal orientation, the surface topography and conductivity of TiN. thin films were investigated. The experimental results show that the main components of the TiN. thin films is tetragonal Ti2 N when the substrate temperature is below 360℃, while deposited at substrate temperature 360℃, except Ti2N, the thin films displays TiN with （ 111 ） preferred orientation. The resistivity of the thin films decreases as substrate temperature increases.
出处
《南昌大学学报（理科版）》
CAS
北大核心
2007年第6期545-548,共4页
Journal of Nanchang University(Natural Science)
基金
江西省自然科学基金资助项目(512026)
同济大学波与材料微结构重点实验室开放基金资助项目(200602)
关键词
磁控溅射
TIN薄膜
基底温度
magnetron sputtering
titanium nitride thin films
substrate temperature
