摘要
Ta205 films were prepared with conventional electron beam evaporation and annealed in 02 at 673 K for 12 h. Laser-induced damage thresholds （LIDTs） of the films were performed at 532 and 1064 nm in 1-on-1 regime firstly, and then were performed at 532, 800, and 1064 nm in n-on-1 regime, respectively. The results showed that the LIDTs in n-on-1 regime were higher than that in 1-on-1 regime at 532 and 1064 nm. In addition, in n-on-1 regime, the LIDT increased with the increase of wavelength. Furthermore, both the optical property and LIDT of Ta205 films were influenced by annealing in 02.
Ta205 films were prepared with conventional electron beam evaporation and annealed in 02 at 673 K for 12 h. Laser-induced damage thresholds （LIDTs） of the films were performed at 532 and 1064 nm in 1-on-1 regime firstly, and then were performed at 532, 800, and 1064 nm in n-on-1 regime, respectively. The results showed that the LIDTs in n-on-1 regime were higher than that in 1-on-1 regime at 532 and 1064 nm. In addition, in n-on-1 regime, the LIDT increased with the increase of wavelength. Furthermore, both the optical property and LIDT of Ta205 films were influenced by annealing in 02.
