摘要
采用电化学沉积法在孔径为200 nm的阳极氧化铝膜AAO模板中成功制备了Cu金属纳米线阵列、结合紫外线光刻法组装了图案化铜纳米线阵列。电化学沉积法可通过控制沉积时间来获得具有不同长径比的铜纳米线阵列;图案化的纳米线排列规整,高度有序;且纳米线组成的形状与掩膜相同。
Cu nanowires are successfully prepared via electrochemical decomposition in the AAO membrane of a 200nm in aperture diameter. Besides, patterned Cu nanowires are fabricated by pholithography. By this method the depositing time can be controlled to get Cu nanowires with various length/diameter ratio, and the patterned nanowire arrays are highly arranged. The appearance is just the same with the photomask.
出处
《现代化工》
EI
CAS
CSCD
北大核心
2007年第12期42-44,共3页
Modern Chemical Industry
关键词
铜纳米线
电化学沉积法
图案化
AAO
Cu nanowires
electrochemical decomposition
patterning
AAO
