摘要
近年来,ZnO基紫外探测器由于其优异的光电特性,已成为紫外探测领域研究中的新热点之一。介绍了近年来国内外不同结构类型的ZnO基紫外探测器的研究状况,并对影响探测器性能的ZnO的光电导特性、薄膜微结构、掺杂、金半接触等关键技术进行了探讨,指出推动ZnO紫外探测器实用化进程的关键在于制备高质量的掺杂薄膜以及进一步提高器件的量子效率。
Recently, ZnO has been regarded as promising materials for UV detectors due to its predominant optical and electrical properties. In this paper, the structures and performances of various types of ZnO-based UV detectors are introduced, and the latest progress and key technologies of ZnO-based UV detectors such as photoconductive property of ZnO, film＇s microstructure, doping, and metal-semiconductor contact, are described in detail. To sum up, preparing high quality doping film and improving quantum efficiency are critical for the practical process of ZnO UV detectors.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2007年第12期1-5,共5页
Materials Reports
基金
国家自然科学基金(No.60390073)
预研基金(ZJ0508)
