摘要
通过Ｘ射线衍射（ＸＲＤ）、扫描电子显微镜（ＳＥＭ）、透射电子显微镜（ＴＥＭ）和高能电子衍射（ＲＨＥＥＤ）等技术，研究了由蒸发冷凝法制备的ｎ型半导体材料ＧｄＳｅ超细微粒涂层（ＣｄＳｅ／Ｎｉ）的烧结工艺。实验指出，烧结后的ＧｄＳｅ粉体涂层的结晶形态、膜层的致密均匀性以及结晶粒度的尺寸等均与烧结的工艺条件密切相关。将涂在Ｎｉ箔上的ＧｄＳｅ粉体膜层置于氩气氛中，在缓慢升降温的条件下，于４５０～５００℃温度下恒温２ｈ的多次重复烧结，可以获得表面平整致密、在衬底Ｎｉ箔上附着力强的ＧｄＳｅ多晶膜层，以下称ＣｄＳｅ／Ｎｉ为烧结体。将烧结体应用于半导体隔膜电极（（ＳｎＯ２·Ｐ／ＣｄＳｅ／Ｎｉ）中，可有效地改善半导体隔膜电化学伏打电池（ＳＣ－ＳＥＰ电池）的光电化学特性。
This paper mainly dealt with the sintering conditions of ultrafine particles GdSe coating layers (CdSe/Ni) by XRD, SEM, TEM and high energy electron diffraction (RHEED). The ultrafine particles GdSe were prepared by using evaporation condensation method. The experiment indicated that the crystalline structure of sintering body (CdSe/Ni) depended on sintering technique. The heat treatment of GdSe coating layers could improve structure perfection and proper crystalline grain size. The GdSe coating layers annealed at 450～500℃ for 2h were used to fabricate the semiconductor septum electrodes (SnO 2·P/CdSe/Ni) with good photoelectro chemical properties, in semiconductor septum electrochemical photovoltaic (SC SEP) cells.
出处
《功能材料》
EI
CAS
CSCD
北大核心
1997年第5期479-481,共3页
Journal of Functional Materials
