摘要
介绍了一种有效提高铝基硬质氧化膜硬度的电沉积钨合金封孔技术。利用铝基阳极氧化膜的孔隙导电性,用钴作诱导剂,可以在铝基氧化膜的孔隙中电沉积出钨钴合金。结果表明,钨钴合金从孔隙底部致密地向上填充,能完全封闭孔隙。加之钨钴合金本身的高硬度和高强度可以与硬质氧化膜较好地相配合,能有效地减小应力集中,膜层硬度也因此获得明显提高。
A sealing technology of the holes in the hard anodizing film with the deposited W alloy was introduced to increase its hardness. W-Co alloy was electrodeposited in the holes in the oxide film on aluminum by using Co as the inducer. The experimental results showed that W-Co alloy was compactly filled up from the bottom of holes, and the holes were sealed completely. Besides, the hardness of W-Co alloy was compatible with the hard anodizing film. Stress concentration was effectively reduced, therefore the film hardness was increased obviously.
出处
《材料保护》
CAS
CSCD
北大核心
2007年第12期33-34,44,共3页
Materials Protection
关键词
阳极氧化膜
电沉积
封孔
钨合金
硬度
anodizing film
electrodepositing
sealing
tungsten alloy
hardness
