摘要
提出了基于寄生参数自校正的高精度温度传感器,并给出了基于CSMC0.5μm混合信号CMOS工艺的仿真结果，利用CMOS工艺衬底pnp三极管的发射区-基区pn结作为温度传感单元,提出了易于开关-电容电路实现的寄生电阻校正方法,消除了基区电阻非线性对温度测量的影响,提高了测量精度，电路仿真结果显示,系统测温误差在-55℃-125℃范围内仅为±0.3℃。
A novel parasitic auto-correction precision silicon temperature sensor in a 0.5μm CMOS process is presented. Simu-lation shows that its accuracy is within ±0.3℃ in the full military temperature range from -55 to 125℃ with just one point calibration at 300K. This result is achieved by canceling the base resistor of the CMOS substrate pnp transistors with two structures., three bias temperature sensors and a novel switch-capacitor Sigma-Delta ADC analog front end. The bias current and the emit area of pnp transistors are carefully chosen to avoid serious nonlinearity and a novel analog front end is controlled by four non-overlapping clocks to ease digital processing after ADC.
关键词
温度传感器
误差自校准
基区电阻消除
CMOS衬底三极管
temperature sensor
error auto-correction
base resistor cancellation
CMOS substrate transistor
