摘要
硬盘盘基片粗抛光必须在较高材料去除率的基础上获得高表面质量。分别用合成法和粉碎法制得的α-A l2O3颗粒做了抛光实验,并分析了抛光液中氧化剂、络合剂含量和抛光液pH值对材料去除率的影响机制。结果表明：用合成法制得的颗粒抛光后基片表面凹坑严重,降低抛光液配方中氧化剂的含量,虽可使表面粗糙度（Ra）和表面波纹度（Wa）大幅降低,但材料去除率也大幅下降,该颗粒不适合基片粗抛光;用粉碎法制得的颗粒抛光后基片表面划痕密集,加入一定量的减阻剂后基片Ra和Wa大幅降低,材料去除率有所降低但仍维持在较高的水平,因此减阻剂可平衡该颗粒的材料去除率和抛光表面质量;粉碎法制得的颗粒抛光液中,随氧化剂和络合剂的增加,材料去除率均呈先升后降趋势;pH值的升高会使材料去除率下降,但酸性太强会引起过腐蚀,适宜的pH在2.0-3.0之间。
Both high material removal rate（MRR） and smooth surface have to be achieved in primary chemical mechanical polishing（CMP） of hard disk substrates.The CMP experiments were made by using compositive and comminuted α-Al2O3 particles separately.The mechanisms of MRR affected by oxidant,complexant and pH value were analyzed.The results show that severe pits appear on substrate surface polished by compositive particles.Surface roughness（Ra） and surface waviness（Wa） could be greatly reduced by slashing the content of oxidant yet the MRR was unfavorably cut down.This kind of particles is not suitable to the primary CMP of disk substrates for MRR is awfully low.Dense scratches exist on substrate surface polished by comminuted particles;lubricant is helpful to reduce Ra and Wa of polished substrates.Though the MRR decreases correspondingly,it is still fairly high.Lubricant can be used to balance the surface quality and the MRR.The MRR would increase first and then decrease with the raising of either oxidant or complexant content in slurry containing comminuted particles.The MRR would go down with the increase of pH value but over-corrosion would be caused if the pH value is too low.It is suitable to maintain it between 2.0 and 3.0.
出处
《润滑与密封》
CAS
CSCD
北大核心
2007年第11期1-4,30,共5页
Lubrication Engineering
基金
国家自然科学基金委员会与广东省政府自然科学联合基金重点项目(U0635002)
国际科技合作计划项目(2006DFA73350)
国家973计划项目(2003CB716201)
关键词
硬盘基片
化学机械抛光
材料去除率
hard disk substrate
chemical mechanical polishing
material removal rate
