摘要
采用高温溶液降温法在掺质浓度均为5mol%的KTP-K6溶液中分别生长了单掺Rb+和Cs+的KTP晶体,发现掺质改变了晶体生长习性,在相应生长体系中掺质Rb+和Cs+的分配系数分别为0.646和0.08,掺质KTP晶体的晶胞参数a0和b0比纯KTP晶体者略有增长。通过掺Rb+或Cs+,KTP晶体的c向电导率明显降低,但晶体在350～1100nm范围内的光透过性质未受影响。
Rb^＋：KTP and Cs^＋：KTP crystals have been grown respectively by slow cooling method in KTP-K6 high temperature solutions with 5mol% Rb^＋ or Cs^＋. It is found that the crystal growth habit has been changed by the doping. The distribution coefficients of Rb^＋ or Cs^＋ in corresponding growth system are 0.646 and 0.08 respectively. The lattice parameters a0 and b0 of doped KTP crystal are slightly longer than those of pure KTP crystal. By the doping of Rb^＋ or Cs^＋, the conductivity along c-direction of KTP crystal decrease obviously, but the transmission properties of KTP crystal in wave range of 350-1100nm have not be affected.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2007年第5期1052-1055,共4页
Journal of Synthetic Crystals
关键词
掺质KTP晶体
生长习性
分配系数
透过
c向电导率
doped KTP crystal
growth habit
distribution coefficient
transmission
c-direction conductivity
