摘要
针对块RAM和标准CLB单元的电路布局问题,提出了一个新的混合模式布局算法。在标准单元采用模拟退火方式的前提下,对块RAM的布局进行算法改进。不但兼顾了块RAM的布局方式,也兼顾了原有的算法。
This paper describes a algorithm that is a new mix mode placement for RAM and standard CLB cell designs in circuit. Standard cell adopt stimulated annealing mode, and RAM adopt improved optimize algorithm. The algorithm not only includes RAM＇s placement mode, but also includes original style.
出处
《微处理机》
2007年第5期26-27,30,共3页
Microprocessors
