摘要
采用二步阳极氧化法制备了多孔阳极氧化铝（PAA）薄膜,借助于扫描电子显微镜（SEM）分析了多孔阳极氧化铝薄膜的微观形貌,发现在其表面孔径为70～90nm的六边形孔洞分布均匀,且垂直于表面平行生长。依据PAA反射光谱的实验数据,利用Kramers-Kronig关系计算出PAA薄膜的复折射率、复介电常数以及光学能隙等光学常数。通过分析吸收系数与入射光子能量之间的关系,表明PAA具有直接带隙（能隙约为3.4eV）半导体的光学性质。
The highly ordered porous anodic alumina films were fabricated by two-step anodizing process in oxalic acid solution.The morphology of the PAA was investigated by scanning electron microscopy（SEM）,the highly ordered hexagonal pores grown in PAA with diameters of 70～90nm and thickness of several tens of micrometers pack with each other closely.Based on the experimental data of the reflection spectrum,the structural and optical parameters such as complex refractive index,complex dielectric constant and optical band gap of PAA were calculated by adopting Kramers-Kronig transformation.Through analyzing the relation between the absorption coefficient of PAA and the photon energy of incident light,the PAA film exhibited the optical features of a semiconductor with direct band gap of about 3.4eV.
出处
《功能材料与器件学报》
EI
CAS
CSCD
北大核心
2007年第5期471-475,共5页
Journal of Functional Materials and Devices
基金
国家自然科学基金资助项目(No.60477034)
关键词
多孔阳极氧化铝
反射光谱
K-K关系
光学常数
porous anodic alumina
reflection spectrum
Kramers-Kronig relation
optical constants
