摘要
用量子力学中密度矩阵算符理论导出了加偏置电场的双曲线量子阱中光整流系数的解析表达式.并以典型的GaAs双曲线量子阱为例进行了数值计算。研究结果表明,该势阱中的光整流系数与势阱的形状和偏置电场的强度有关。通过调节势阱参量a以及外加偏置电场,在该势阱中可获得一个大的光整流系数.
The optical rectification coefficient in electric-field biased hyperbolic quantum wells was studied. The analytic expression of optical rectification coefficient of this system is derived by means of density matrix approach and the iterative method. Finally, the numerical results were presented for a typical GaAs electric-field biased hyperbolic quantum wells. The results show that the optical rectification coefficient in this system is larger than that in bulk GaAs material and it will change with the change of the parameter a of the quantum well and the applied electric field F.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2007年第5期812-815,共4页
Acta Photonica Sinica
基金
Supported by the Natural Science Foundation ofGuangdong Province under Grant NOZ02069
关键词
非线性光学
双曲线量子阱
密度矩阵方法
光整流效应
Nonlinear optics
Hyperbolic quantum wells
Density matrix approach
Optical rectification coefficient
