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应用溶胶-凝胶技术制备的硅钨酸修饰离子敏感场效应晶体管传感器的电化学行为

Electrochemical Behavior of Silicotungstic Acid Modified Ion-Sensitive Fieldistor(ISFET) Sensor Prepared with Sol-gel Technique
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摘要 将Keggin型硅钨酸-阿托品缔和物掺杂到溶胶-凝胶中,滴涂在离子敏感场效应晶体管的栅极表面,制备成传感器。并对传感器的电化学行为,包括pH值的影响和传感器的稳定性进行了研究。结果表明:此传感器既保持了离子敏感场效应晶体管的特点,又具有良好的稳定性和灵敏度。传感器对阿托品响应的线性范围为1.0×10^-3~5.0×10^-6mol·L^-1,响应灵敏度为59.0mV/pc,传感器适宜的pH为3.0~8.0。用所制传感器测定阿托品注射液的含量,结果和药典方法相一致。 The association complex of a "Keggin" heteropolyacid, silicotungstic acid, with atropine was admixed with sol-gel, which was then applied to the surface of grid of ISFET, and a sensor having sensitive response toward atropine was prepared. A thorough study on its electrochemical behavior was performed, showing that not only the characteristics of ISFET was maintained, but also stable and sensitive Nernst response toward atropine with a slope of 59. 0 mV/pc over the concentration range 1.0×10^-3~5.0×10^-6mol·L^-1 at pH 3.0-8, 0 was obtained. Detection limit of this method was found to be 1.0×10^-6mol·L^-1. In its application to the analysis of atropine injection, results obtained were in consistency with results found by pharmacopoeia method.
出处 《理化检验(化学分册)》 CAS CSCD 北大核心 2007年第10期821-822,826,共3页 Physical Testing and Chemical Analysis(Part B:Chemical Analysis)
关键词 离子敏感场效应晶体管 硅钨酸 溶胶-凝胶技术 阿托品 Ion sensitive fieldistor Silicotungstic acid Sol-gel technique Atropine
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