摘要
利用磁控溅射法制备了氧化铟锡(ITO)、掺铝氧化锌(ZAO)、TiO2/Ag/TiO2纳米多层等三种透明的低发射率薄膜。研究了这些低发射率薄膜以及降低材料红外发射率对降低红外辐射强度和红外隐身所起的作用。结果表明:降低红外发射率可以有效地抑制由于温度升高所带来的附加红外辐射;低红外发射率薄膜在红外隐身中有潜在应用价值。
Three kinds of transparent low-emissivity thin films, i. e. indium-tin oxide ( ITO), aluminum-doped zinc oxide (ZAO) and TiO2/Ag/TiO2 nano-multilayers, are prepared by magnetron sputtering. Effects of low infrared emissivity materials on restriction of object infrared radiation are analyzed theoretically and experimentally. The results show that lowering infrared emissivity is an effective measure to restrain additive infrared radiation caused by temperature rise. The low emissivity thin films are promising to play an important role in infrared stealth field.
出处
《宇航材料工艺》
CAS
CSCD
北大核心
2007年第5期39-42,共4页
Aerospace Materials & Technology
基金
国家自然科学基金资助(90305026)
关键词
低发射率
红外隐身
薄膜
Low emissivity, Infrared stealth, Thin films