期刊文献+

固体绝缘介质表面陷阱参数的分析 被引量:7

Analysis of Surface Trapping Parameters of Solid Insulation Dielectrics
下载PDF
导出
摘要 为了研究聚合物绝缘材料表面陷阱参数对其绝缘性能的影响,在简述了等温电流衰减理论后依该理论设计了材料表面陷阱分布测量装置,并实际测量了聚合物低密度聚乙烯、聚丙烯和聚四氟乙烯的表面陷阱分布。在对材料直流充电后将其短路1min以清除表面沉积的自由电荷,再移去短路电极并将探头迅速移至材料表面充电区域记录表面电位。实验保持恒温条件,用等温电流衰减理论计算材料的陷阱分布参数。实验表明电子空穴陷阱与材料的分子结构密切相关,聚合物不同高分子链影响着陷阱电荷的分布。 In order to investigate the relationship between the surface trap and insulation performance of polymers. The theory of isothermal currents proposed by J. G. Simmson etc in 70s last century was introduced in this paper and a set up of measurement device was designed to measure the trapping parameters of the surface layer of polymers. 3 kinds of polymer material films were used. The needle-plane corona discharge was employed to charge the samples. The upper side of each sample was subjected to adc corona discharge in atmosphere, and the other side was grounded. The applied voltage was 4-4 kV and the charging time was set as 2 min. After charging, all needle electrodes were taken away, and the two sides of the sample were short-circuited for 1 minute to remove the free charges. Then the surface potential of samples was measured without contacting a surface potential meter (S2001A, Kawaguchi), and the surface trapping parameters could be calculated by the theory of isothermal currents. The electrons and holes traps shape of LDPE and PTFE was similar but not similar to PP. Results show that density of electrons and holes traps and energy distribution are related with the macromolecular chain structure, the different atom attached to the main chain affects the traps distribution heavily.
出处 《高电压技术》 EI CAS CSCD 北大核心 2007年第9期13-16,共4页 High Voltage Engineering
基金 教育部优秀青年教师计划资助项目~~
关键词 固体绝缘 陷阱参数 等温电流 聚合物 电晕 陷阱能级 solid insulation trapping parameters isothermal currents polymers corona traps energy
  • 相关文献

参考文献16

  • 1高观志 黄维.固体中的电输运[M].北京:科学技术出版社,1991.231-250. 被引量:13
  • 2张冠军,杨敏中,严璋,刘源兴,安冈康一,石井彰三.采用光学方法研究陶瓷绝缘材料的沿面闪络特性[J].中国电机工程学报,2000,20(8):27-30. 被引量:11
  • 3尹毅,肖登明,屠德民.空间电荷在评估绝缘聚合物电老化程度中的应用研究[J].中国电机工程学报,2002,22(1):43-48. 被引量:108
  • 4Simmons J G,Taylor G W.Thermally stimulated currents in semiconductors and insulators having arbitrary trap distributions[J].Phys Rev B,1973,8(7):3714-3719. 被引量:1
  • 5吕金壮,全玉生,李成榕,丁立健,孟延荣,王景春,屠幼萍,王鹏.热刺激电流试验系统的研制及应用[J].高电压技术,2003,29(2):11-12. 被引量:3
  • 6王立衡.介质的热刺激理论及其应用[M].北京:科学出版社,1988. 被引量:1
  • 7Simmons J G,Tam M C.Theory of isothermal currents and the direct determination of trap parameters in semiconductors and insulators containing arbitrary trap distributions[J].Phys Rev B,1972,7(8):3706-3713. 被引量:1
  • 8Simmons J G,Taylor G W.High field isothermal currents and thermally stimulated currents in insulators having discrete trapping levels[J].Physical Review B,1972,5(4):1619-1629. 被引量:1
  • 9Kozlov N A,Sinkevitch V F,Vashchenko V A.Isothermal current instability and local breakdown in gaas FET[J].IEEE Trans on Dielectr Insul,1992,28(13):1265-1267. 被引量:1
  • 10R 科埃略,B 阿拉德尼兹.电介质材料及其介电性能[M].张冶文,陈玲,译.北京:科学出版社,2000. 被引量:2

二级参考文献9

共引文献129

同被引文献110

引证文献7

二级引证文献143

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部