摘要
通过对在Si(111)-7×7表面上生长的Pb岛施加脉冲偏压,Pb岛受到触发而自发再生长。通过调节操纵参数(如脉冲电压的大小和时间),岛的高度及形状可以较精确地控制。用这种方法,我们可以制造出一些特定形状的纳米结构,例如中空和半中空的纳米阱等,还可以在更大尺度(微米)上进一步构建由这些纳米结构单元构成的图案。在纳米结构的构建过程中,还观察到了量子效应对薄膜生长的影响。
We reported a novel method of constructing nanostructures with atomic layer precision, by manipulating a large number of atoms using a scanning tunneling microscope. By applying pulse voltages on the as-grown Pb island on Si（ 111 ）-7 × 7 surface, the target island can be triggered to re-grow simultaneously, and the height and shape of the target island were precisely controllable through regulating the manipulation parameters. Artificial nanostructures, such as nanomesas, center-full-hollowed and half-hollowed nanowells, as well as largescale nanostructure patterns coued be created by this way. Quantum size effects on the growth of thin films were observed and discussed.
出处
《电子显微学报》
CAS
CSCD
2007年第4期363-369,共7页
Journal of Chinese Electron Microscopy Society
基金
科技部973项目(2002CB613500)
国家自然科学基金资助项目(No.90406015).~~
