摘要
用N型硅单晶材料制作了点状PN结光电二极管 ,对二极管的光电参数进行了测量。若依平面结的受光面积计算 ,在同样的光辐射下 ,点状PN结光电二极管的光电流密度是常规面积光电二极管光电流密度的 2 0 0倍以上。分析表明 ,在光探测机制上不仅要考虑平面结范围内的光电转换 ,更要考虑平面结周边一个少数载流子扩散长度范围内的光电转换。利用点状PN结光照电流的测量 ,可以确定在衬底材料中光生少子的扩散长度。
The point type PN junction photodiodes of silicon are fabricated,and the photoelectric parameters of photodiode are measured.It found that,according to the calculation to the sensitive area with the planar junction,under the same radiation,the light current density of the point type PN junction photodiode is more than that of the photodiode with usual area by a factor of 200.It is shown that,based on the light detection mechanism,the photoelectric conversion is only not taken into account in the planar junction,but also in diffusion length of minority carriers in a periphery of planar junction.By use of light current measurement of point type PN junction,the diffusion length of photogenerated minority carriers in the substrate can be determined.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
1997年第1期47-50,60,共5页
Semiconductor Optoelectronics
关键词
半导体光电器件
光敏二极管
光电转换
PN结
Semiconductor Photoelectronic Devices,Photodiodes,Photoelectric Conversion,PN Junction
