摘要
对蓝宝石衬底片的化学机械抛光进行了研究。系统地分析了蓝宝石抛光工艺过程的性能参数,通过大量实验,总结出了其影响因素并提出了优化方案。结果表明,采用粒径为40nm、低分散度的二氧化硅溶胶磨料并配合以适当参数进行抛光,可以获得良好的表面状态和较高的去除速率。能够有效地提高蓝宝石表面的性能及加工效率。
The chemical mechanic polishing （CMP） technology of sapphire substrate is studied and the performance parameters of the sapphire polishing process are analyzed systematically in the paper. The influencing factors were summarized and optimizing scheme was proposed by repeated experiments. The result shows that using the abrasives of silicon dioxide colloid of 40nm in diameter and low distribution degree combined with appropriate parameters to polish the sapphire substrate result in good surface morphology and higher polishing rate, having greatly improved the surface performance and processing efficiency.
出处
《超硬材料工程》
CAS
2007年第4期52-55,共4页
Superhard Material Engineering
关键词
蓝宝石
化学机械抛光
纳米二氧化硅溶胶
sapphire
chemical mechanical polishing （CMP）
nano-SiO2 colloid
