摘要
用脉冲激光二极管阵列(LDA)作为泵浦源、微柱透镜阵列和透镜导管作为耦合系统,以As+注入GaAs可饱和吸收片作为被动调Q锁模元件,实现了Nd∶YVO4激光器调Q锁模运转.调Q运转阶段,激光器每泵浦脉宽内输出一个调Q脉冲,调Q脉宽7ns.调Q锁模运转阶段,初始透过率60%的GaAs晶片对调Q包络内的锁模脉冲的调制深度达到95%以上,锁模脉冲重复频率991MHz.研究了加在LDA上的电压、方波脉冲的脉宽和重复频率对调Q锁模脉冲特性的影响,并对实验结果进行了讨论.
A passively Q-switched pulse-LDA （laser diode array ）-pumped Nd ： YVO4 laser using As^＋ implanted GaAs as a saturable absorber is demonstrated. In the Qswitching experiment, the laser produces one Qswitching pulse in every pumping pulse duration and a Q-switching pulse width 7 ns is achieved which,to our knowledge, is the shortest pulse width in a passively Q-switched Nd ： YVO4 laser using GaAs as saturable absorber. In the Q-switching mode locking experiment, using a 60% initial transmission GaAs wafer,the modulation depth of larger than 95% and the repetition rate of 991 MHz of the mode locked pulses in the Q-switched envelope are obtained. The characteristics of the Q-switched mode locked pulses by varying the pumping pulse amplitude, pulse width and repetition rate are investigated respectively. The experimental results are discussed as well.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2007年第9期1578-1581,共4页
Acta Photonica Sinica
基金
国家自然科学基金(60577015)资助
