2[1]Kamura S, Senoh M, Iwasa N, et al. Superbright green InGaN single-quantum-well-structure light-emitting diodes. Jpn.J.Appl.Phys.,1995,34:L1332-1335 被引量：1
3[2]Mukai T, Narimatsu H, Nakamure S, et al. Amber InGaN-based light-emitting diodes operable at high ambient temperatures.Jpn.J.Appl.Phys.,1998,37:L479-481 被引量：1
4[3]Fumitomo Hide, Peter Kozodoy,Steven P, et al. White light from InGaN*/conjugated polymer hybrid light-emitting diodes. Appl.Phys.Lett.,1997,70(20):2664-2666 被引量：1
5[4]Tetsushi Tamura, Tatsumi Setomoto, Tsunemasa Taguchi. Illumination characteristics of lighting array using 10 candela-class white LEDs under AC 100V operation. Journal of Luminescence, 2000,87-89;1180-1182 被引量：1
6Petroski J. Thermal challenges facing new generation light emitting diodes (LEDs) for lighting applications [J]. Proc. of SPIE, 2002,4 776: 219-222. 被引量：1
7Wang Xiaohua, Fan Xiwu, Shan Chongxin et al.. Growth and optical characteristics of ZnCdSe/ZnSe QWs on Si suhstrate with ZnO buffer[J]. Chin. Opt. Lett. , 2003, 1(11); 668-670. 被引量：1
