摘要
采用了新型的包含22元件的GaN HEMT小信号模型,通过增加与栅源电容Cgs和栅漏电容Cgd并联的电导Ggsf和Ggdf来表征GaN HEMT栅漏电情况.结果表明22元件小信号模型拟合度提高,物理意义更为明确.同时重点改进了寄生电容参数的提取方法,可有效地提取新型栅场板、源场板器件小信号参数.由算法提取的参数值可准确反映GaN HEMT器件的物理特性.
This paper uses a new GaN HEMT small signal model that includes 22 elements and increases the conductance of Ggd and Ggdf and has parallel gate-source capacitance Cgs and gate-drain capacitance Cgd, which can reflect the gate＇s leakage current. The results show that this model can improve the fitting precision and makes more sense in the physical domain. This paper improves the extraction method for extrinsic capacitance parameters, which can extract the new gate-field plate and source-field plate devices＇ small-signal parameters effectively. It can reflect the physical characteristics of GaN devices accurately from the extracted parameters.
