摘要
介绍了基于非晶硅薄膜晶体管的室温红外探测器的基本特征及性能指标,对晶体管宽长比对探测器性能的影响进行了理论分析,分析表明,提高晶体管的宽长比可以改善探测器的探测率。为了克服传统微桥结构室温红外探测器成品率低的不足,提出了一种新的热绝缘材料,并将该材料应用到了非制冷红外探测器中,实际制备了探测器单元,对该材料的热绝缘能力进行了验证。
The basic characteristics and parameters of uncooled amorphous silicon thin film transistor were introduced, and the influence of aspect ratio on performance was analyzed. According to the results, the performance can be improved by increasing the aspect ratio of the transistor. New type of thermal isolation material（Polyimide-PI） was presented to overcome the disadvan- tage of low yield of traditional microbridge thermal isolation structure. New uncooled infrared detector based on the thermal isolation material and amorphous transistor was fabricated to verify the thermal isolation capability of the material.
出处
《微纳电子技术》
CAS
2007年第7期219-221,共3页
Micronanoelectronic Technology
关键词
非晶硅薄膜晶体管
非制冷红外探测器
电流温度系数
插指结构
amorphous thin film transistor
uncooled infrared detector
temperature coefficient of current
finger-cross structure
