摘要
利用单圈内置式ICP-CVD方法在室温下制备了Si薄膜。在拉曼光谱、原子力显微镜(AFM)对样品结构分析的基础上,采用对样品结构无损伤的椭圆偏振光谱(SE)法对样品进行了测量,结合有效介质近似(EMA)模型,对样品的微结构进行了计算拟合。拉曼光谱及AFM分析表明:样品为具有纳米晶相的Si薄膜;分光椭圆偏振法结合EMA模型对样品微结构的拟合分析得出了同样的结论,说明即使在室温下用ICP-CVD也获得了具有纳米晶相的Si薄膜,薄膜微结构与源气体SiH4浓度有密切关系。说明分光椭圆偏振法是研究薄膜材料的一种有力手段。
The Si films were deposited by ICP-CVD at room temperature. After the analysis of Raman spectra and atomic force microscopy, the microstructure of sample was measured using Spectroscopic ellipsometry（SE）, and fitting the structure associated EMA models. We find that the nanocrystalline film can be synthesized at room temperature by ICP-CVD. There is same conclusion for the fitting analysis of SE. There is intimate relationship between the microstructure of film and the SiH4 concentration. The results show that spectroscopic ellipsometry is an effective method for the study of film materials.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2007年第A01期931-934,共4页
Rare Metal Materials and Engineering
