摘要
由聚硅氧烷裂解制备出Si-O-C陶瓷,其电阻率为2220Ω·cm。在聚硅氧烷中添加Al和MoSi2可以制备出低电阻率的Al/Si-O-C和MoSi2/Si-O-C陶瓷。制备温度对材料电阻率有很大的影响。
Si-O-C ceramics were fabricated from polysiloxane pyrolysis, whose electrical resistivity was 4.5 × 10^-4（Ω·cm）^-1. Al/Si-O-C and MoSi2/Si-O-C ceramics with lower electrical resistivity could be fabricated by filling Al and MoSi2 particles into the polysiloxane, respectively. The processing temperature had a significant influence on electrical resistivity of Al/Si-O-C and MoSi2/Si-O-C ceramics.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2007年第A01期619-621,共3页
Rare Metal Materials and Engineering
基金
国防预研项目
关键词
Si-O-C陶瓷
电阻率
聚硅氧烷
填料
先驱体裂解
silicon oxycarbide ceramics
electrical resistivity
polysiloxane
fillers
precursor pyrolysis
