摘要
应用射频反应磁控溅射的方法,将ZnO薄膜沉积于高磷掺杂的n+型Si衬底上。在沉积和后退火过程中,磷向ZnO薄膜扩散并被激活,使ZnO薄膜由n型转化为p型,从而形成p型ZnO薄膜。X射线衍射分析(XRD)证明了所制备的ZnO薄膜都是高c轴取向的六角纤锌矿结构的薄膜。电学I-V关系曲线的整流特性和空穴浓度≥1.78×1018/cm3的霍耳效应测试结果证明了p型ZnO薄膜的形成。
ZnO thin films were initially deposited on heavily doped Si substrates by radio frequency reaction magnetron sputtering,and were changed from n-type to p-type by phosphorus diffusing from the Si substrates to the ZnO films and being activated during deposition and annealing.Experimental results of X-ray diffraction show that the ZnO crystalline was hexagonal wurtzite structure and highly c axis orientated.The formation of p-type ZnO films was confirmed by the electrical rectifying characteristics of the p-ZnO/n＋-Si heterojunctions and the hole concentrations which were greater than 1.78×10^18/cm^3 measured by Hall effect experiments.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2007年第4期859-862,共4页
Journal of Synthetic Crystals
基金
广东省自然科学基金(No.04011770)
江门市科技计划(江财企【2004】59号)项目
关键词
磷扩散
P型ZNO薄膜
磁控溅射
异质ZnOp-n结
phosphorous diffusion
p-type ZnO thin film
magnetron sputtering
ZnO p-n heterojunction.
