摘要
理论考察了存在强内建电场的纤锌矿GaN/InxGa1-xN耦合量子阱体系的二次谐波产生(SHG)特性,结果发现共振SHG系数达到了10-7m/V的量级,SHG系数对耦合量子阱的结构与掺杂组份呈现非单调的依赖关系.结果还表明,通过选择小尺寸垒宽与大尺寸阱宽的耦合量子阱,并适当降低掺杂组份,可在氮化物耦合量子阱中获得较强的SHG极化率.
The second-harmonic, generation （SHG） susceptibility of a wurtzite GaN/In, Ga1-x N coupling quantum well （CQW） with strong built-in electric field was theoretically investigated. The calculated results reveal that the resonant SHG coefficients reach the order of magnitude of 10^-7 m/V and the SHG coefficients are not monotonic functions of the well width, barrier width and the doped concentration of the CQW systems. Our results also show that a strong SHG coefficient can be obtained in the nitride CQW by choosing optimized structural parameters and doped fraction. n
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第4期251-255,共5页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金(60276004与60390073)
广州市属高校科技(2060)资助项目
关键词
密度矩阵方法
氮化物耦合量子阱
内建电场
二次谐振波产生
density-matrix method
nitride coupling quantum well
built-in electric field
second- harmonic generatio
