摘要
介绍了带隙基准电压源的基本原理,设计了一种高精度带隙基准电压源电路。该电路采用中芯国际半导体制造公司0.18μm CMOS工艺。Hspice仿真表明,基准输出电压在温度为-10～120℃时,温度系数为6.3×10-6/℃,在电源电压为3.0～3.6 V内,电源抑制比为69 dB。该电压基准在相变存储器芯片电路中,用于运放偏置和读出/写驱动电路中所需的高精度电流源电路。
A novel super performance CMOS voltage reference circuit was designed based on the theory of bandgap voltage reference. Using SMIC 0.18μm CMOS process, Hspice simulation shows that the average temperature coefficient is 6.3×10^-6/℃ in the rage of - 10 - 120℃. The circuit also has a high power supply rejection ratio, about 69 dB when power supply voltage changes from 3.0 - 3.6 V. It can be used in the high precision driver circuit of phase change memory chip.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第9期792-795,共4页
Semiconductor Technology
基金
国家重点基础研究发展计划(2006CB302700)
国家863计划(2006AA03Z360)
中国科学院(Y2005027)
上海市科委(05JC14076
0552nm043
AM0517
06QA14060
06XD14025
0652nm003
06DZ22017)
